发明名称 |
MEMORY CELL AND METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION (MTJ) OF A MEMORY CELL |
摘要 |
<p>A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.</p> |
申请公布号 |
CA2711305(C) |
申请公布日期 |
2015.02.10 |
申请号 |
CA20092711305 |
申请日期 |
2009.01.08 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
GU, SHIQUN;KANG, SEUNG H.;NORWAK, MATTHEW M. |
分类号 |
H01L43/08 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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