Semiconductor memory with sense amplifier

摘要

In an exemplary aspect, the present invention provides a semiconductor memory device including sense amplifiers that drive bit lines to which memory cells are connected, and driver transistors that supply a power supply to the sense amplifiers, wherein the sense amplifiers are arranged in rows and constitutes a first sense-amplifier row in which transistors of a first conductive type are arranged and a second sense-amplifier row in which transistors of a second conductive type are arranged, and the driver transistors constitutes at least one transistor row including a first driver transistor of the first conductive type corresponding to the first sense-amplifier row and a second driver transistor of the second conductive type corresponding to the second sense-amplifier row between the first sense-amplifier row and the second sense-amplifier row.

主权项

1. A semiconductor memory device, comprising:
a plurality of sense amplifiers, each of the sense amplifiers amplifying a difference in potential between a pair of bit lines, the sense amplifiers having a plurality of first transistors and a plurality of second transistors, the first transistors being formed in a first sense amplifier region and the second transistors being formed in a second amplifier region; a plurality of sense amplifier drivers supplying a power supply to the sense amplifiers, each of the sense amplifier drivers having a first driver transistor and a second driver transistor, the first driver transistor having a different conductivity type from the second driver transistor, the first driver transistor and the second driver transistor being alternately arranged in a first direction (Y direction) between the first sense amplifier region and the second sense amplifier region, and an element separation boundary arranged between the first driver transistor and the second driver transistor, wherein the first driver transistor is formed in a first region between the first sense amplifier region and the second sense amplifier region, wherein the second driver transistor is formed in a second region across a third region from the first region, wherein in the third region, the element separation boundary is arranged in a second direction (X direction) which is different from the first direction.