Super surge diodes

摘要

The present disclosure relates to a semiconductor device having a Schottky contact that provides both super surge capability and low reverse-bias leakage current. In one preferred embodiment, the semiconductor device is a Schottky diode and even more preferably a Silicon Carbide (SiC) Schottky diode. However, the semiconductor device may more generally be any type of semiconductor device having a Schottky contact such as, for example, a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET).

主权项

1. A semiconductor device comprising:
a drift layer of a first conductivity type, the drift layer comprising:
a plurality of junction barrier shield element recesses in the drift layer within an active region of the drift layer; anda plurality of implant regions extending into the drift layer from corresponding ones of the plurality of junction barrier shield element recesses, the plurality of implant regions being of a second conductivity type that is opposite the first conductivity type; an epitaxial surge current injection region on the drift layer adjacent to the plurality of junction barrier shield element recesses; a Schottky layer on the drift layer to form a Schottky junction between the Schottky layer and the drift layer; and an ohmic layer on a surface of the epitaxial surge current injection region opposite the drift layer, wherein the Schottky layer further extends over a surface of the ohmic layer opposite the epitaxial surge current injection region.