发明名称 |
Acoustic sensor, acoustic transducer, microphone using the acoustic transducer, and method for manufacturing the acoustic transducer |
摘要 |
In an acoustic sensor, a conductive vibrating membrane and a fixed electrode plate are disposed above a silicon substrate with an air gap provided therebetween, and the substrate has an impurity added to a surface thereof. A microphone includes an acoustic transducer; and an acquiring section that acquires a change in pressure as detected by the acoustic transducer. A method for manufacturing an acoustic transducer including a semiconductor substrate, a vibrating membrane, which is conductive, and a fixed electrode plate and detecting a pressure according to a change in capacitance between the vibrating membrane and the fixed electrode plate, the method includes an impurity adding step of adding an impurity to a surface of the semiconductor substrate; and a forming step of forming the vibrating membrane and the fixed electrode plate above the semiconductor substrate to which the impurity has been added. |
申请公布号 |
US8952468(B2) |
申请公布日期 |
2015.02.10 |
申请号 |
US201113699989 |
申请日期 |
2011.04.20 |
申请人 |
OMRON Corporation;STMicroelectronics Srl |
发明人 |
Ishimoto Koichi;Tatara Yoshitaka;Inuzuka Shin;Conti Sebastiano |
分类号 |
H01L29/84;H04R19/00;H04R19/04 |
主分类号 |
H01L29/84 |
代理机构 |
Osha Liang LLP |
代理人 |
Osha Liang LLP |
主权项 |
1. An acoustic transducer comprising:
a semiconductor substrate; a vibrating membrane, which is conductive; and a fixed electrode plate, wherein the vibrating membrane and the fixed electrode plate are disposed above the semiconductor substrate with an air gap provided therebetween, and wherein said acoustic transducer detects a pressure according to a change in capacitance between the vibrating membrane and the fixed electrode plate, and wherein a surface of the semiconductor substrate comprises an added impurity, and wherein a first portion of the surface which is electrically connected to the vibrating membrane or the fixed electrode plate has a lower impurity concentration than a second portion of the surface, and wherein the first portion and the second portion are on the same side. |
地址 |
Kyoto-shi, Kyoto JP |