Methods for fabricating and forming semiconductor device structures including damascene structures

摘要

A method and apparatus for providing a conductive structure adjacent to a damascene conductive structure in a semiconductor device structure. The semiconductor device structure includes an insulation layer with at least one damascene conductive structure formed therein, wherein the at least one damascene conductive structure includes an insulative, protective layer disposed thereon. The insulative material of the protective layer is able to resist removal by at least some suitable etchants for the insulative material of the insulation layer adjacent to the at least one damascene conductive structure. A self-aligned opening is formed by removing a portion of an insulation layer adjacent the at least one damascene conductive structure. The self-aligned opening is then filled with a conductive material to thereby provide another conductive structure adjacent to the at least one damascene conductive structure.

主权项

1. A method for fabricating a semiconductor device structure, comprising:
configuring a first insulative material to include at least one trench therein and at least another trench laterally adjacent to the at least one trench; configuring a second insulative material to line the at least one trench and at least a portion of the at least another trench; configuring a conductive structure within the at least one trench to be partially surrounded by the second insulative material; configuring an insulative cap to enclose the conductive structure within the second insulative material; and configuring another conductive structure to be disposed within the at least another trench and to have an upper surface coplanar with or elevated above an upper surface of the insulative cap.