| 发明名称 | Parallel-plate structure fabrication method | ||
| 摘要 | A fabrication method for parallel-plate structures and a parallel-plate structure arrangement, wherein the structures have a middle layer, grown on a substrate and disposed between top and bottom electrode layers, wherein the middle layer and the top and bottom electrode layers are deposited on a bottom substrate, and wherein the middle layer is grown first and the top and bottom electrodes are essentially deposited afterwards. | ||
| 申请公布号 | US8950057(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US200712440743 | 申请日期 | 2007.09.14 |
| 申请人 | Valtion Teknillinen Tutkimuskeskus | 发明人 | Riekkinen Tommi;Mattila Tomi |
| 分类号 | H01S4/00;H01G7/00;H01G7/06;H01L49/02;H01L41/29;H01L41/187;H01L41/312 | 主分类号 | H01S4/00 |
| 代理机构 | Thorpe North & Western LLP | 代理人 | Thorpe North & Western LLP |
| 主权项 | 1. A fabrication method for parallel-plate structures, wherein the structures have a middle layer on a first substrate and disposed between top and bottom electrode layers, and wherein the middle layer and the top and bottom electrode layers are deposited on a second substrate, the method comprising: growing the middle layer on the first substrate first; and depositing the bottom electrode after growing the middle layer to form a layer stack; transferring the layer stack to the second substrate; removing the first substrate; and depositing the top electrode on top of the middle layer. | ||
| 地址 | FI | ||