| 摘要 |
Disclosed are a GaN based light emitting device and a method of manufacturing the same using post-mechanical treatment. A GaN based light emitting device according to one embodiment includes a first electrode, a second electrode and a flexible substrate which are successively stacked, an n-GaN layer, an active layer, and a p-GaN layer which are formed between the first electrode and the second electrode and form a core-shell structure, a burying layer which is formed between the flexible substrate and the first electrode. The first electrode and the core-shell structure are buried in the burying layer. The manufacturing method includes a high temperature process of forming an n-GaN layer and a process of weakening the adhesion of an interface between a first GaN layer and a metal layer and then transferring an LED to a flexible substrate, which is a process of attaching a tape to an upper electrode and then mechanically separating the same. |
