| 发明名称 | Stacked carbon-based FETs | ||
| 摘要 | Methods and systems for forming stacked transistors. Such methods include forming a lower channel layer on a substrate; forming a pair of vertically aligned gate regions over the lower channel layer; forming a pair of vertically aligned source regions and a pair of vertically aligned drain regions on the lower channel material, each pair separated by an insulator; forming an upper channel material over the source regions, drain regions, and gate regions; and providing electrical access to the source, drain, and gate regions. | ||
| 申请公布号 | US8952431(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201313890849 | 申请日期 | 2013.05.09 |
| 申请人 | International Business Machines Corporation | 发明人 | Guo Dechao;Han Shu-Jen;Lu Yu;Wong Keith Kwong Hon |
| 分类号 | H01L29/66;H01L29/78;H01L29/786 | 主分类号 | H01L29/66 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
| 主权项 | 1. A method for forming stacked transistors, comprising: forming a lower channel layer on a substrate; forming a pair of vertically aligned gate regions over the lower channel layer; forming a pair of vertically aligned source regions and a pair of vertically aligned drain regions on the lower channel material, each pair separated by an insulator; forming an upper gate dielectric over the source regions, drain regions, and gate regions; forming an upper channel material over the upper gate dielectric; and providing electrical access to the source, drain, and gate regions. | ||
| 地址 | Armonk NY US | ||