| 发明名称 | Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and computer-readable recording medium | ||
| 摘要 | A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | ||
| 申请公布号 | US8951912(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201213616148 | 申请日期 | 2012.09.14 |
| 申请人 | Hitachi Kokusai Electric Inc. | 发明人 | Ogawa Arito;Takeda Tsuyoshi |
| 分类号 | H01L21/44;H01L21/02;C23C14/14;C23C16/36;C23C16/455;H01L21/28 | 主分类号 | H01L21/44 |
| 代理机构 | Volpe and Koenig, P.C. | 代理人 | Volpe and Koenig, P.C. |
| 主权项 | 1. A method of manufacturing a semiconductor device, comprising: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times to form a metal carbide layer containing the first metal element on the substrate, and (ii) a second step of supplying a nitridation raw material to the substrate to nitride the metal carbide layer, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | ||
| 地址 | Tokyo JP | ||