| 发明名称 | Covered member and process for production thereof | ||
| 摘要 | Disclosed is a covered member including a base material, a first intermediate layer that has a roughened surface and covers the base material, and a DLC film that covers the surface of the first intermediate layer. The first intermediate layer and the DLC film are formed in a state where the temperature of the base material is kept at 300° C. or lower. The surface of the first intermediate layer is roughened by collision of ions. | ||
| 申请公布号 | US8951640(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201113635480 | 申请日期 | 2011.04.08 |
| 申请人 | JTEKT Corporation | 发明人 | Suzuki Masahiro;Saito Toshiyuki;Yamakawa Kazuyoshi |
| 分类号 | C23C16/00;C23C16/26;C23C16/02;C23C16/515;C23C28/04 | 主分类号 | C23C16/00 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A process for production of a covered member having a base material at least a portion of which is covered by a DLC film, comprising: a first intermediate layer formation step which forms a first intermediate layer by a DC pulse plasma CVD method that covers a surface of the base material while keeping a temperature of the base material at 300° C. or lower; a roughening step which roughens a surface of the first intermediate layer by making ions collide with the surface of the first intermediate layer while keeping the temperature of the base material at 300° C. or lower; and a DLC film formation step which forms a DLC film by a DC pulse plasma CVD method that covers the roughened surface of the first intermediate layer while keeping the temperature of the base material at 300° C. or lower. | ||
| 地址 | Osaka JP | ||