Manufacturing method and apparatus for semiconductor device

摘要

A manufacturing method for semiconductor device includes: loading a wafer to a reaction chamber and placing the wafer on a support member; supplying process gas including source gas to a surface of the wafer, controlling a heater output and heating the wafer to a predetermined temperature while rotating the wafer at a first rotational speed, and thereby forming a film on a surface of the wafer; stopping supplying the source gas; decreasing a rotational speed of the wafer to a second rotational speed which enables an offset balance of the wafer to be maintained and stopping the heater output; and decreasing a temperature of the wafer while rotating the wafer at the second rotational speed.

主权项

1. A manufacturing apparatus for semiconductor device comprising:
a reaction chamber configured to load a wafer therein; a support member provided in the reaction chamber and configured to place the wafer thereon; a process gas supply mechanism configured to supply process gas including a source gas to a surface of the wafer during a film formation on the wafer and to supply a purge gas to the surface of the wafer after the film formation; a gas discharge mechanism configured to discharge gas, to control a pressure in the reaction chamber, and to vent the source gas after the film formation; a rotation driving control mechanism configured to control a rotational speed of the wafer to a predetermined first rotational speed during the film formation, and to a second rotational speed which is equal to or more than 50% of the first rotational speed and is decreased from the first rotational speed and is maintained after the film formation; a heater configured to heat the wafer to a predetermined temperature; and a temperature control mechanism configured to control an output of the heater to a predetermined temperature during the film formation, and to turn off the heater output when the rotational speed of the wafer is decreased from the first rotational speed to the second rotational speed and a process for decreasing the temperature of the wafer is started after the film formation.