发明名称 Substrate processing apparatus and particle adhesion preventing method
摘要 Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.
申请公布号 US8950999(B2) 申请公布日期 2015.02.10
申请号 US200812525314 申请日期 2008.01.31
申请人 Tokyo Electron Limited 发明人 Tamura Akitake;Hayashi Teruyuki
分类号 H01L21/677;H01L21/67 主分类号 H01L21/677
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A substrate processing apparatus comprising: a transfer chamber that performs delivery of a substrate to and from a substrate accommodating container, in which the substrate is accommodated, via a gate at which the substrate accommodating container is set; a processing chamber that performs a specific process on the substrate; a load-lock chamber that connects the processing chamber with the transfer chamber; and a temperature control unit that adjusts a temperature of the substrate such that the temperature of the substrate just before the substrate is loaded into a selected one of the transfer chamber and the load-lock chamber is maintained to be higher than an internal temperature of the selected chamber, wherein the temperature control unit includes a hot air supplier to adjust the temperature of the substrate by supplying, to an interior of the substrate accommodating container, hot air adjusted to have a temperature higher than the internal temperature of the selected chamber, wherein the transfer chamber has an air passage formed in the transfer chamber to guide the hot air to the gate, and the hot air supplier supplies the hot air to the interior of the substrate accommodating container via the air passage and the gate, wherein the air passage is defined between a sidewall of the transfer chamber and a partition wall provided in the transfer chamber and the partition wall has an opening, wherein a door is provided at the gate to open or close the gate and the air passage is isolated from an atmosphere of the transfer chamber by closing the opening with the door at least during the supplying of the hot air via the air passage and the gate, and wherein the gate and the opening are configured such that the substrate is transferred between the substrate accommodating container and the transfer chamber via the gate and the opening.
地址 Tokyo JP