Solid-state imaging device and imaging apparatus

摘要

The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate and provided for reading out a signal corresponding to electric charges generated in the photoelectric conversion portion are disposed in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a reset transistor as defined herein; the charge storage portion includes a first charge storage region, a second charge storage region and a separation/connection region as defined herein; and the output transistor outputs a signal corresponding to the potential of the second charge storage region.

主权项

1. A solid-state imaging device in which pixels each comprising a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate and provided for reading out a signal corresponding to electric charges generated in the photoelectric conversion portion are disposed in an array form, wherein:
the photoelectric conversion portion comprises a pixel electrode formed above the semiconductor substrate so as to be split in accordance with each of the pixels, a counter electrode formed above the pixel electrode, and a photoelectric conversion layer formed between the pixel electrode and the counter electrode; a bias voltage higher than a power supply voltage of the signal reading circuit is applied to the counter electrode so that holes of the electric charges generated in the photoelectric conversion layer move to the pixel electrode; the signal reading circuit comprises a charge storage portion which is formed in the semiconductor substrate and in which the holes moved to the pixel electrode are stored, an output transistor which outputs a signal corresponding to the potential of the charge storage portion, and a reset transistor which is provided for resetting the potential of the charge storage portion to a predetermined reset potential; the charge storage portion comprises a first charge storage region made from an n-type impurity region electrically connected to the pixel electrode, a second charge storage region made from an n-type impurity region formed next to but spaced from the first charge storage region, and a separation/connection region which electrically separates the first charge storage region and the second charge storage region from each other when the potential is higher than a predetermined potential in a sectional potential but which electrically connects the first charge storage region and the second charge storage region to each other when the potential is not higher than the predetermined potential in the sectional potential; holes moved from the pixel electrode are stored in each of the first charge storage region, the second charge storage region and the separation/connection region till the quantity of holes moved to the pixel electrode reaches a predetermined quantity, but holes moved from the pixel electrode are stored only in the first charge storage region when the quantity of holes moved to the pixel electrode exceeds the predetermined quantity; and the output transistor outputs a signal corresponding to the potential of the second charge storage region.