Methods for fabrication of an air gap-containing interconnect structure

摘要

Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

主权项

1. An interconnect structure comprising:
a cured photo-patternable low k (PPLK) material located atop a substrate, wherein said cured PPLK material includes a plurality of conductively filled openings located therein; at least one air gap located within said cured PPLK material between preselected neighboring conductively filled openings, but not directly beneath said conductively filled openings, wherein a vertical portion of the at least one air gap directly contacts a diffusion barrier layer lining sidewall surfaces of said conductively filled openings and a bottommost surface of said at least one air gap directly contacts a portion of said cured PPLK material; and a dielectric cap located atop said cured PPLK material and atop said at least one air gap.