| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device comprises a substrate, a through-silicon via (TSV) penetrating the substrate, a plurality of first interconnect structures, right above the TSV, configured for electrically coupling the TSV to a higher-level interconnect, a second interconnect structure traversing the TSV from the top and being configured for interconnect routing of an active device and a plurality of dummy metal patterns, right above the TSV, electrically isolated from the TSV, the first interconnect structures and the second interconnect structure. | ||
| 申请公布号 | US8952500(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201313833129 | 申请日期 | 2013.03.15 |
| 申请人 | IPEnval Consultant Inc. | 发明人 | Huang Chao-Yuan;Ho Yueh-Feng;Yang Ming-Sheng;Chen Hwi-Huang |
| 分类号 | H01L23/48;H01L23/522;H01L23/538;H01L23/498 | 主分类号 | H01L23/48 |
| 代理机构 | Kamrath IP Lawfirm, P.A. | 代理人 | Kamrath Alan D.;Kamrath IP Lawfirm, P.A. |
| 主权项 | 1. A semiconductor device, comprising: a substrate; a through-silicon via (TSV) penetrating the substrate; a plurality of first interconnect structures, right above the TSV, configured for electrically coupling the TSV to a higher-level interconnect; a second interconnect structure, traversing the TSV from a top, configured for interconnect routing of an active device; and a plurality of dummy metal patterns, right above the TSV, electrically isolated from the TSV, the first interconnect structures and the second interconnect structure. | ||
| 地址 | Hsinchu TW | ||