Gated bipolar junction transistors

摘要

Some embodiments include gated bipolar junction transistors. The transistors may include a base region between a collector region and an emitter region; with a B-C junction being at an interface of the base region and the collector region, and with a B-E junction being at an interface of the base region and the emitter region. The transistors may include material having a bandgap of at least 1.2 eV within one or more of the base, emitter and collector regions. The gated transistors may include a gate along the base region and spaced from the base region by dielectric material, with the gate not overlapping either the B-C junction or the B-E junction. Some embodiments include memory arrays containing gated bipolar junction transistors. Some embodiments include methods of forming gated bipolar junction transistors.

主权项

1. A semiconductor construction, comprising:
a gated bipolar junction transistor which includes:
a base region between a collector region and an emitter region;a B-C junction at an interface of the base region and the collector region;a B-E junction at an interface of the base region and the emitter region;at least part of at least one of the base region, the collector region and the emitter region comprising at least one wide bandgap material, said at least one wide bandgap material having a bandgap of at least 1.2 eV; anda gate along the base region and spaced from the base region by dielectric material; the gate not overlapping either the B-C junction or the B-E junction.