Semiconductor devices including an electrically percolating source layer and methods of fabricating the same

摘要

Various embodiments are provided for semiconductor devices including an electrically percolating source layer and methods of fabricating the same. In one embodiment, a semiconductor device includes a gate layer, a dielectric layer, a memory layer, a source layer, a semiconducting channel layer, and a drain layer. The source layer is electrically percolating and perforated. The semiconducting channel layer is in contact with the source layer and the memory layer. The source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.

主权项

1. A semiconductor device, comprising:
a gate layer formed on a substrate; a dielectric layer formed on the gate layer; a memory layer formed on the dielectric layer; a source layer formed on the memory layer, where the source layer is electrically percolating and perforated; a semiconducting channel layer formed on the source layer, where the semiconducting channel layer is in contact with the source layer and the memory layer, and where the source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier; and a drain layer formed on the semiconducting channel layer.