发明名称 PHOCON SEMICONDUCTOR ELECTRIC-DISCHARGE LASER
摘要 FIELD: electricity.SUBSTANCE: phocon semiconductor electric-discharge laser (PSEDL) comprises high-voltage nanopulser, transmitting line, chamber with electrodes and laser target, the chamber consists of two sections divided by partition of dielectric material with opening in the centre and filled with gas (air, nitrogen, helium, etc.), which pressure is set within limits of 0.1-5 Torr; laser target consists of conical fibre guide (focon) and plane-parallel semiconductor plate fixed at the cone peak.EFFECT: potential improvement of directional property of laser radiation, improved image of the near-field.6 cl, 2 dwg
申请公布号 RU2541417(C1) 申请公布日期 2015.02.10
申请号 RU20130149023 申请日期 2013.11.05
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE UCHREZHDENIE NAUKI FIZICHESKIJ INSTITUT IM. P.N. LEBEDEVA ROSSIJSKOJ AKADEMII NAUK(FIAN) 发明人 NASIBOV ALEKSANDR SERGEEVICH;BAGRAMOV VLADIMIR GEORGIEVICH;BEREZHNOJ KONSTANTIN VIKTOROVICH;SHAPKIN PETR VASIL'EVICH
分类号 H01S3/00 主分类号 H01S3/00
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