发明名称 |
Apparatus and method for reading a phase-change memory cell |
摘要 |
An apparatus and a method for reading a phase-change memory cell are described. A circuit includes a current ramp circuit. A current forcing module is coupled with the current ramp circuit. A Veb emulation circuit is coupled with the current forcing module by a voltage adder, the voltage adder to sum an output from the Veb emulation circuit and a high impedance voltage source. A method includes forcing a current ramp into both a bitline and a dummy bitline, the dummy bitline having a voltage. The method also includes tripping a comparator when the current ramp provides a storage voltage with a predefined value, the storage voltage associated with the phase-change memory cell, and the predefined value independent from a resistance value of the phase-change memory cell and added in series to the voltage of the dummy bitline. |
申请公布号 |
US8953360(B2) |
申请公布日期 |
2015.02.10 |
申请号 |
US200913514532 |
申请日期 |
2009.12.10 |
申请人 |
Micron Technology, Inc. |
发明人 |
Bedeschi Ferdinando |
分类号 |
G11C13/00;G11C11/56 |
主分类号 |
G11C13/00 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A circuit for reading a phase-change memory cell, the circuit comprising:
a current ramp circuit; a current forcing module coupled with the current ramp circuit; and a Veb emulation circuit coupled with the current forcing module by a voltage adder, the voltage adder to sum an output from the Veb emulation circuit and a high impedance voltage source. |
地址 |
Boise ID US |