| 发明名称 | Apparatuses and methods of reprogramming memory cells | ||
| 摘要 | Apparatuses and methods for reprogramming memory cells are described. One or more methods for memory cell operation includes programming a number of memory cells such that each of the number of memory cells are at either a first program state or a second program state, the second program state having a first program verify voltage associated therewith; and reprogramming the number of memory cells such that at least one of the number of memory cells is reprogrammed to a third program state having a second program verify voltage associated therewith, wherein those of the number of memory cells having a threshold voltage less than the second program verify voltage represent a same data value. | ||
| 申请公布号 | US8953379(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201314070911 | 申请日期 | 2013.11.04 |
| 申请人 | Micron Technology, Inc. | 发明人 | Cerafogli Chiara;Macerola Agostino |
| 分类号 | G11C11/34;G11C16/04;G11C16/34;G11C11/56;G11C16/10 | 主分类号 | G11C11/34 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A method for operating memory cells, comprising: reprogramming at least one of a number of memory cells that are at either a first program state or a second program state and are associated with a first program verify voltage to a third program state associated with a second program verify voltage, wherein those of the number of memory cells having a threshold voltage less than the second program verify voltage represent a same data value. | ||
| 地址 | Boise ID US | ||