| 发明名称 | Methods for probing semiconductor wafers | ||
| 摘要 | A wafer probing method includes calibrating a wafer probing system, checking continuity between probe pins of the wafer probing system and respective conductors of a wafer under test, and identifying at least an interconnect structure in the wafer under test to determine whether a fault exists. | ||
| 申请公布号 | US8952711(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201113277761 | 申请日期 | 2011.10.20 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wang Mill-Jer;Peng Ching-Nen;Lin Hung-Chih;Chen Hao |
| 分类号 | G01R31/00;G01R35/00;G01R31/28;G01R31/11 | 主分类号 | G01R31/00 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A wafer probing method, comprising: calibrating a wafer probing system; checking continuity between probe pins of the wafer probing system and respective conductors of a wafer under test; and identifying at least an interconnect structure in the wafer under test to determine that a fault exists when the identified interconnect structure does not match an expected interconnect structure; wherein each of said calibrating, checking, and identifying uses time-domain reflectometry (TDR), and wherein said calibrating includes causing the probe pins to contact areas having higher impedances than the conductors of the wafer under test, andperforming TDR measurements while the probe pins are in contact with said areas. | ||
| 地址 | TW | ||