Electropositive metal containing layers for semiconductor applications

摘要

Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the layers are thin or ultrathin (films that are less than 100 {acute over (Å)} thick) and or conformal films. Additionally provided are transistor devices, metal interconnects, and computing devices comprising metal layers comprising one or more electropositive metals.

主权项

1. A nanowire transistor device comprising, a suspended nanowire that forms the channel region of the transistor device, a layer of dielectric material disposed on the suspended nanowire, a metal layer disposed on the layer of dielectric material wherein the metal layer comprises 99.5-75.0 atomic % of a group 2-7 metal or Al and Si or Ge present in an amount that ranges between 0.5 and 10.0 atomic % of Si or Ge, wherein the nanowire is suspended in the gate electrode and the metal layer forms part of the gate electrode.