| 发明名称 | Techniques for processing photoresist features using ions | ||
| 摘要 | A method of treating a substrate includes directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered surface layer encapsulating an inner portion of the one or more photoresist features, and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features. | ||
| 申请公布号 | US8952344(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201313829979 | 申请日期 | 2013.03.14 |
| 申请人 | Varian Semiconductor Equipment Associates | 发明人 | Sinclair Frank;Godet Ludovic;Martin Patrick M.;Kpissay Armah |
| 分类号 | G21K5/04;G03F7/00 | 主分类号 | G21K5/04 |
| 代理机构 | Kacvinsky Daisak Bluni PLLC | 代理人 | Kacvinsky Daisak Bluni PLLC |
| 主权项 | 1. A method of treating a substrate, comprising: directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in a surface region of the one or more photoresist features, the altered layer encapsulating an inner portion of the one or more photoresist features; and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features. | ||
| 地址 | Gloucester MA US | ||