发明名称 Reaction apparatus for processing wafer, electrostatic chuck and wafer temperature control method
摘要 This invention discloses a reaction apparatus for wafer treatment, an electrostatic chuck and a wafer temperature control method, in the field of semiconductor processing. The electrostatic chuck comprises an insulating layer for supporting a wafer and a lamp array disposed in the insulating layer. Each lamp of the lamp array can be independently controlled to turn on and off and/or to adjust the output power. By controlling the on/off switch and/or output power of each lamp of the lamp array the temperature of the wafer held on the ESC is adjusted and temperature non-uniformity can be more favorably adjusted, greatly improving wafer temperature uniformity, particularly alleviating non-radial temperature non-uniformity.
申请公布号 US8952297(B2) 申请公布日期 2015.02.10
申请号 US201213351741 申请日期 2012.01.17
申请人 Semiconductor Manufacturing International (Beijing) Corporation 发明人 He Qiyang;Zhang Yiying
分类号 F27B5/14;H01L21/67;H01L21/683;H05B1/00 主分类号 F27B5/14
代理机构 Koppel, Patrick, Heybl & Philpott 代理人 Koppel, Patrick, Heybl & Philpott ;Ram Michael J.
主权项 1. An electrostatic chuck (ESC) for holding a wafer, comprising: an insulating layer for supporting a wafer; and a lamp array disposed in the insulating layer.
地址 Beijing CN