| 摘要 |
The present disclosure relates to a contact structure of a semiconductor device. A preferable structure for a contact structure of the semiconductor device includes: a substrate including a main surface; a fin structure extending from the main surface of the substrate upwards, the fin structure including a first fin, a second fin, and a third fin between the first fin and a second fin; a first germanium material on the first fin wherein the first bottom surface of the first germanium material has a first acute angle to the main surface; a second germanium material on the second pin opposite to the first germanium material in the third fin, practically in mirror symmetry; and a third germanium material on the third fin wherein the third bottom surface of the third germanium material has a second acute angel which is smaller than the first acute angle to the main surface. |
