| 发明名称 | Low-loss superconducting devices | ||
| 摘要 | Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer. | ||
| 申请公布号 | US8954125(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201113192597 | 申请日期 | 2011.07.28 |
| 申请人 | International Business Machines Corporation;The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards | 发明人 | Corcoles Gonzalez Antonio D.;Gao Jiansong;Hite Dustin A.;Keefe George A.;Pappas David P.;Rothwell Mary E.;Steffen Matthias;Tsuei Chang C.;Vissers Michael R.;Wisbey David S. |
| 分类号 | H01L39/14;H01L39/24;H01B12/06;H01P1/203;H01P3/00;G06N99/00;H01L39/22;H01P1/201;H01P3/02 | 主分类号 | H01L39/14 |
| 代理机构 | Ryan, Mason & Lewis, LLP | 代理人 | Alexanian Vazken;Ryan, Mason & Lewis, LLP |
| 主权项 | 1. A method of forming a superconducting device, comprising: forming a silicon nitride (SiN) seed layer on a substrate, wherein the SiN seed layer is formed with a thickness in a range of about 1 nm to about 3 nm; and growing a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer using the SiN seed layer for nucleation of the (200)-oriented texture TiN layer growth. | ||
| 地址 | Armonk NY US | ||