| 摘要 |
An OLED apparatus including a thin film transistor including an activation layer, a gate electrode insulated from the activation layer and including a lower gate electrode and an upper gate electrode, an interlayer insulation film covering the gate electrode, and a source and drain electrode on the insulation film and contacting the activation layer; an OLED including a pixel electrode electrically connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode; a blister prevention layer on a same level as the activation layer; a gate insulation layer covering the activation layer and the blister prevention layer and insulating the activation layer from the gate electrode; and an interconnection unit including first and second layers on a portion of the gate insulation layer overlying the blister prevention layer, wherein the blister prevention layer protects the interconnection unit on the gate insulation layer from blistering. |
| 主权项 |
1. An organic light-emitting display apparatus, comprising:
a thin film transistor, the thin film transistor including:
an activation layer,a gate electrode insulated from the activation layer, the gate electrode including a lower gate electrode and an upper gate electrode,an interlayer insulation film covering the gate electrode, anda source electrode and a drain electrode on the insulation film, the source electrode and the drain electrode contacting the activation layer; an organic light-emitting device, the organic light-emitting device including, sequentially stacked in this order:
a pixel electrode electrically connected to the thin film transistor,an intermediate layer including an emissive layer, andan opposite electrode; a blister prevention layer on a same level as the activation layer; a gate insulation layer covering the activation layer and the blister prevention layer, the gate insulation layer insulating the activation layer from the gate electrode; and an interconnection unit, the interconnection unit including first and second layers on a portion of the gate insulation layer overlying the blister prevention layer, wherein: the first layer of the interconnection unit includes a transparent conductive metal oxide, and the second layer of the interconnection unit includes at least three metallic layers, each metallic layer including one or more of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, W, MoW, and Cu. |
