Variable-resistance material memories and methods

摘要

Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells.

主权项

1. A method of forming a memory device, comprising:
forming a dielectric on a semiconductive substrate; forming a first electrode against the dielectric; forming a variable resistance material coupled to the first electrode, wherein a first minor-axis surface of the first electrode forms an interface with the variable resistance material, and wherein forming the variable resistance material coupled to the first electrode includes placing the variable resistance material in a trench adjacent to the first electrode; and forming a second electrode coupled to the variable resistance material.