| 主权项 |
1. A method for manufacturing a resin structure for the formation of a micro-structure, comprising the steps of:
(A) applying a sacrificial film-forming composition onto a substrate, said composition comprising (1) a polymer having some phenolic hydroxyl groups protected with an acid-labile protective group, (2) a photoacid generator, and (3) an organic solvent, (B) heating the sacrificial film-forming composition on the substrate to form an optically patternable sacrificial film having a thickness of 1 to 30 μm, (C) exposing the sacrificial film to first high-energy radiation in accordance with a pattern layout image, (D) developing the sacrificial film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to second high-energy radiation which is ultraviolet radiation, and (F) heating the substrate at 100 to 250° C., wherein the exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm2, and at the end of step (F), the sacrificial film has a sidewall which maintains an angle of 80° to 90° relative to the substrate; wherein the polymer (1) is a resin represented by the general formula (1) and having a weight average molecular weight of 1,000 to 500,000, wherein R1 and R3 each are hydrogen, hydroxyl, C1-C3 straight or branched alkyl, halogen, or trifluoromethyl, R2 is hydroxyl, halogen or trifluoromethyl, R2′ is an optionally substituted C1-C4 alkyl, ditrifluoromethylhydroxy, or —OR group, R is a C1-C20 straight, branched or cyclic alkyl, alkoxyalkyl, alkoxycarbonyl or trialkylsilyl group, which may contain a heteroatom, R4 is hydrogen, an optionally substituted C1-C4 alkyl, ditrifluoromethylhydroxy, or —OR group, R5 is hydrogen or methyl, R6 is hydrogen, methyl, alkoxycarbonyl, cyano, halogen or trifluoromethyl, R7 is C4-C30 alkyl, n is an integer of 1 to 4, m is an integer of 0 to 5, p, q, r and s each are 0 or a positive number, q+r is a positive number, and R2′ where q is a positive number, R4 where r is a positive number, or at least one of R2′ and R4 where both q and r are positive numbers is an —OR group in which the hydrogen atom of some phenolic hydroxyl groups is substituted by an acid-eliminatable protective group, and which is selected from among groups of the following formulaeformulae (2) and (3), C4-C20 straight, branched or cyclic tertiary alkoxy groups, trialkylsiloxy groups in which each alkyl moiety has 1 to 6 carbon atoms, C4-C20 oxoalkoxy groups, tetrahydropyranyloxy, tetrahydrofuranyloxy and trialkylsiloxy groups, wherein R8, R9, R10, R11, and R12 are each independently hydrogen or a C1-C8 straight or branched alkyl group, preferably a C1-C8 straight or branched alkyl group, R10 is a C1-C18 monovalent hydrocarbon group that may be separated by an oxygen atom, a pair of R8 and R9, R8 and R10, or R9 and R10 may bond together to form a ring with the carbon atom or the carbon and oxygen atoms to which they are attached, in the case of ring formation, each of participant R8, R9, and R10 is a C1-C18 straight or branched alkylene group, R13 is a C4-C40 straight, branched or cyclic alkyl group, the subscript “a” is 0 or an integer of 1 to 4, provided that p+q+r+s=1. |
