| 摘要 |
<p>Disclosed is a cleaning method of removing contaminants from an electrical contact interface of a partially processed semiconductor substrate. The method includes the steps of: introducing halogen-containing species into a processing chamber; and forming an adsorption-limited layer atop the contaminants provided on the electrical contact interface and/or above an upper portion of the electrical contact interface, wherein the adsorption-limited layer includes halogen obtained from the halogen containing species. The method may further include the steps of removing a non-adsorbed halogen-containing species from the processing chamber; and activating the reaction between the contaminants existing on the electrical contact interface and the halogen provided on the adsorption-limited layer. The reaction may cause elimination of at least a portion of the contaminants from the electrical contact interface. According to embodiments, the halogen adsorbed and reacted on the surface may be fluorine. In addition, the specification discloses devices having controllers to realize a cleaning technology on the electrical contact interface.</p> |
