| 摘要 |
An embodiment is a method. A first III-V compound semiconductor is grown on the trench of a substrate by an epitaxial growth method. The epitaxial growth process is performed in a chamber. The first III-V compound semiconductor has a first surface including a surface. After the epitaxial growth process, the first surface of the first III-V compound semiconductor is etched to form a deformed surface of the first III-V compound semiconductor. The etching process of the first surface is performed in the chamber with in-situ. A second III-V compound semiconductor is grown on the deformed surface of the first III-V compound semiconductor by an epitaxial growth method. The epitaxial growth method of the first III-V compound semiconductor is performed in a MOCVD chamber. HCl gas can be used for the etching process. Also, a structure formed by the method is disclosed. |
