| 摘要 |
Disclosed are a memory device and a method for operating the memory device. The present invention is provided to change reading voltage by using only one reading command and to repeatedly read data recorded in the same data page in a memory chip (flash memory chip), thereby individually generating several reading commands, increasing data reliability, and minimizing the degradation of a memory performance in comparison to an existing method which repeatedly reads the data in the same data page. The memory device comprises: a command confirming unit which confirms the specific reading command for the data page in the memory chip, a reading voltage determining unit which determines a reading voltage which is greater than or equal to 2 according to the specific reading command, a calculation performing unit which reads data based on the reading voltage for the data page according to the specific reading command, and a data transmitting unit which corrects data errors based on each data in a data error correcting unit. |
