| 摘要 |
<p>The present invention relates to a current sensor amplifier circuit which is fit to be used in a non-volatile memory device such as a magnetic random access memory. A reference memory cell which is used for a sensing operation in the current sensor amplifier circuit can be implemented with a memory cell equivalent to a normal memory cell without using a separate kind. The current sensor amplifier circuit according to the present invention comprises first and second cross-couple differential amplifiers covalently linked together. Accordingly, the present invention can directly compare the current flowing through the sensing node of a memory cell to the currents flowing through the reference sensing nodes without a current mirroring operation to generate a sensing reference current.</p> |
