| 摘要 |
<p>The present invention relates to a semiconductor device and a method for fabricating the same. The present invention relates to a technique capable of improving the reliability of a semiconductor substrate by including a gettering layer on the semiconductor substrate. A semiconductor device according to the present invention may include: a semiconductor substrate; a gettering layer which is formed with a first type impurity and a second type impurity in the semiconductor substrate and getters metal ions; and a dip well region which is formed on the gettering layer in the semiconductor layer.</p> |
