| 摘要 |
<p>The objective of the present invention is to provide a lateral bipolar transistor and a method for manufacturing the same. The lateral bipolar transistor, which can be mixed with micro CMOSFET and LDMOSFET, has a transistor structure which is hardly affected by manufacturing imbalance and has a high gain. The lateral bipolar transistor is characterized by having manufacturing processes and structures of injecting impurities in a self-matching manner for a gate electrode, and forming a base and an emitter layer by diffusion. Furthermore, the lateral bipolar transistor is characterized by using the gate electrode as an independent fourth terminal in addition to the base, an emitter, and a collector to control and improve HFE by a given gate potential, thereby being hardly affected by manufacturing imbalance, or being corrected by a gate terminal and having a high gain.</p> |
