| 发明名称 |
INTERCONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
An interconnection structure of a semiconductor device is provided, where the interconnection structure is constructed in a semiconductor substrate. The interconnection structure includes a first through silicon via and a second through silicon via both penetrating the semiconductor substrate, and the first through silicon via is spaced from the second through silicon via by a distance ranged from 2 μm to 40 μm. |
| 申请公布号 |
US2015035165(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201314086995 |
申请日期 |
2013.11.22 |
| 申请人 |
National Chiao Tung University |
发明人 |
Chen Kuan-Neng;Chang Yao-Jen |
| 分类号 |
H01L23/538 |
主分类号 |
H01L23/538 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An interconnection structure of a semiconductor device, the interconnection structure constructed in a semiconductor substrate, the interconnection structure comprising:
a first through silicon via penetrating the semiconductor substrate; and a second through silicon via penetrating the semiconductor substrate, the first through silicon via and the second through silicon via spaced from each other by a distance, wherein the distance is ranged from 2 μm to 40 μm. |
| 地址 |
Hsinchu City TW |
