| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME |
| 摘要 |
A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C. |
| 申请公布号 |
US2015034970(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201214118173 |
申请日期 |
2012.05.16 |
| 申请人 |
Aketa Masatoshi;Yokotsuji Yuta |
发明人 |
Aketa Masatoshi;Yokotsuji Yuta |
| 分类号 |
H01L29/06;H01L29/16;H01L21/04;H01L29/872;H01L21/265;H01L29/20;H01L29/66 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor layer made of a wide bandgap semiconductor; and a Schottky electrode being in contact with a front surface of the semiconductor layer, the semiconductor layer including: a drift layer that forms the front surface of the semiconductor layer; and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has resistance higher than the drift layer, the high-resistance layer being formed by implanting impurity ions from the front surface of the semiconductor layer and then performing annealing treatment at less than 1500° C. |
| 地址 |
Kyoto-shi JP |
