| 摘要 |
Disclosed are a light emitting diode having a multi-junction structure and a method of forming the same. Each light emitting structure has a bar shape and two light emitting layers formed around a p-type semiconductor layer. Also, a p-type electrode is formed in the side of the p-type semiconductor layer. The formation of the p-type electrode is performed by forming and removing a sacrificial layer, thereby forming a p-type electrode as a side electrode. |
