| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device which enables expansion of a voltage margin of the voltage applied to a transfer gate part and enables suppression of degradation in yield.SOLUTION: A solid state imaging device includes a pixel part 11b', and an electric charge accumulation part. The pixel part 11b' includes a light receiving layer 19 provided on a surface of a semiconductor substrate 17, and a shield layer 20 for the light receiving layer which shields the light receiving layer 19. The electric charge accumulation part includes an electric charge accumulation layer which is provided at a position away from the light receiving layer 19 on the surface of the semiconductor substrate 17, and a shield layer for the electric charge accumulation layer that shields the electric charge accumulation layer. At least one of the shield layer 20 for the light receiving layer and the shield layer for the electric charge accumulation layer includes a recess for exposing a part of the light receiving layer 19 that adjoins a first transfer gate part 13b or a part of the electric charge accumulation layer that adjoins a second transfer gate part. |
