SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having good electrical characteristics; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: forming a first conductive film on an oxide semiconductor film; forming a second conductive film on the first conductive film; selectively removing a part of the second conductive film; forming a third conductive film by covering the second conductive film; and performing a washing treatment after selectively removing a part of the first conductive film and third conductive film. A copper-containing material is used for the second conductive film. A residual copper element is removed by the washing treatment.