METHOD FOR MEASURING RESISTIVITY OF SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring the resistivity of a silicon wafer by which the resistivity of a high-resistivity silicon wafer having a resistivity of 2000Ωcm or more can be measured accurately without causing variation or fluctuation.SOLUTION: A method for measuring a resistivity of silicon wafer comprises the steps of: removing, by means of a water-free treatment, a surface layer on a surface of the silicon wafer to be measured by a thickness of no less than 10 nm when a least two hours elapses after execution of a donor killer treatment on a high-resistivity silicon wafer; and bringing an electrode needle into contact with the surface to be measured with the surface layer removed to measure the resistivity.