发明名称 CONFORMAL SIDEWALL PASSIVATION
摘要 A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features is provided. Coating providing molecules are provided. The coating providing molecules are pyrolyzed, which only produces a first set of byproducts and a second set of byproducts, wherein the first set of byproducts have a sticking coefficient between 10−6 to 5×10−3 and wherein the second set of byproducts includes all remaining byproducts from the pyrolysis wherein all remaining byproducts from the pyrolysis have sticking coefficients less than 10−6. The stack is exposed to the first set of byproducts, causing the first set of byproducts to deposit a coating. The etch layer is etched.
申请公布号 US2015037979(A1) 申请公布日期 2015.02.05
申请号 US201313958393 申请日期 2013.08.02
申请人 Lam Research Corporation 发明人 HUDSON Eric A.
分类号 H01L21/308;H01L21/3065 主分类号 H01L21/308
代理机构 代理人
主权项 1. A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features, comprising: providing coating providing molecules; pyrolyzing the coating providing molecules, which only produce a first set of byproducts and a second set of byproducts, wherein the first set of byproducts have a sticking coefficient between 10−6 to 5×10−3 and wherein the second set of byproducts includes all remaining byproducts from the pyrolysis wherein all remaining byproducts from the pyrolysis have sticking coefficients less than 10−6; exposing the stack to the first set of byproducts, causing the first set of byproducts to deposit a coating; and etching the etch layer.
地址 Fremont CA US
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