发明名称 |
CONFORMAL SIDEWALL PASSIVATION |
摘要 |
A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features is provided. Coating providing molecules are provided. The coating providing molecules are pyrolyzed, which only produces a first set of byproducts and a second set of byproducts, wherein the first set of byproducts have a sticking coefficient between 10−6 to 5×10−3 and wherein the second set of byproducts includes all remaining byproducts from the pyrolysis wherein all remaining byproducts from the pyrolysis have sticking coefficients less than 10−6. The stack is exposed to the first set of byproducts, causing the first set of byproducts to deposit a coating. The etch layer is etched. |
申请公布号 |
US2015037979(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201313958393 |
申请日期 |
2013.08.02 |
申请人 |
Lam Research Corporation |
发明人 |
HUDSON Eric A. |
分类号 |
H01L21/308;H01L21/3065 |
主分类号 |
H01L21/308 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for etching features into an etch layer in a stack disposed below a patterned mask with mask features, comprising:
providing coating providing molecules; pyrolyzing the coating providing molecules, which only produce a first set of byproducts and a second set of byproducts, wherein the first set of byproducts have a sticking coefficient between 10−6 to 5×10−3 and wherein the second set of byproducts includes all remaining byproducts from the pyrolysis wherein all remaining byproducts from the pyrolysis have sticking coefficients less than 10−6; exposing the stack to the first set of byproducts, causing the first set of byproducts to deposit a coating; and etching the etch layer. |
地址 |
Fremont CA US |