| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR LASER |
| 摘要 |
A method of manufacturing a semiconductor laser according to an aspect of the present invention includes (a) sequentially epitaxially growing a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate composed of InP or GaAs and having a plane index of (100), (b) forming a plurality of growth start surfaces having a plane index greater than (100) in an upper surface of the second cladding layer, and (c) epitaxially growing a third cladding layer containing zinc in the plurality of growth start surfaces of the second cladding layer. |
| 申请公布号 |
US2015037919(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414446004 |
申请日期 |
2014.07.29 |
| 申请人 |
Sumitomo Electric Device Innovations, Inc. |
发明人 |
ISHIURA Masami |
| 分类号 |
H01S5/32;H01S5/323 |
主分类号 |
H01S5/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor laser, comprising:
(a) sequentially epitaxially growing a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate composed of InP or GaAs and having a plane index of (100); (b) forming a plurality of growth start surfaces having a plane index greater than (100) in an upper surface of the second cladding layer; and (c) epitaxially growing a third cladding layer containing zinc in the plurality of growth start surfaces of the second cladding layer. |
| 地址 |
Yokohama-shi JP |
