| 发明名称 |
METHODS OF FABRICATING LIGHT EMITTING DIODES BY MASKING AND WET CHEMICAL ETCHING |
| 摘要 |
An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed. |
| 申请公布号 |
US2015037918(A1) |
申请公布日期 |
2015.02.05 |
| 申请号 |
US201414519746 |
申请日期 |
2014.10.21 |
| 申请人 |
Cree, Inc. |
发明人 |
Donofrio Matthew |
| 分类号 |
H01L33/22;H01L33/32 |
主分类号 |
H01L33/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a Light Emitting Diode (LED) having a Group III Nitride face, comprising:
masking the Group III Nitride face with a two-dimensional array of mask features that are spaced apart from one another; and wet chemical etching the Group III Nitride face that is exposed by the two-dimensional array of mask features that are spaced apart from one another. |
| 地址 |
Durham NC US |
