SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND CAMERA MODULE

摘要

According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a first insulating film, a metal oxide film, an antireflection film, and a second insulating film. The photoelectric conversion element photoelectrically converts incident light into charges and stores the converted charges. The first insulating film is provided on a light-receiving surface of the photoelectric conversion element. The metal oxide film is provided on a light-receiving surface of the first insulating film. The antireflection film is provided on a light-receiving surface of the metal oxide film. The second insulating film is formed between the metal oxide film and the antireflection film, and has a thickness of 1 nm or more and 10 nm or less.

主权项

1. A solid-state imaging device comprising:
a photoelectric conversion element that photoelectrically converts incident light into charges and stores the converted charges; a first insulating film that is provided on a light-receiving surface of the photoelectric conversion element; a metal oxide film provided on a light-receiving surface of the first insulating film; an antireflection film formed on a side close to a light-receiving surface of the metal oxide film; and a second insulating film formed between the metal oxide film and the antireflection film, and having a thickness of 1 nm or more and 10 nm or less.