发明名称 SOLID STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SOLID STATE IMAGING DEVICE
摘要 A solid state imaging device includes a semiconductor layer, and a light shielding portion. The semiconductor layer has multiple photoelectric conversion elements. The light shielding portion is provided in the semiconductor layer, and has a light shielding member whose interface with the semiconductor layer is covered by an insulating film. The light shielding portion includes a light shielding region and an element isolation region. The light shielding region is provided in the semiconductor layer on the side close to the light receiving surface of the photoelectric conversion element for shielding light incident on the photoelectric conversion element from a specific direction. The element isolation region is formed to project in the depth direction of the semiconductor layer from the light shielding region toward a portion between the multiple photoelectric conversion elements in order to electrically and optically isolate the multiple photoelectric conversion elements from one another.
申请公布号 US2015035100(A1) 申请公布日期 2015.02.05
申请号 US201314093642 申请日期 2013.12.02
申请人 Kabushiki Kaisha Toshiba 发明人 TANIDA Kazumasa
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid state imaging device comprising: a semiconductor layer having multiple photoelectric conversion elements arranged in a two-dimensional array; a light shielding portion that is provided in the semiconductor layer, and includes a light shielding member having an interface with the semiconductor layer, the interface being covered by an insulating film, wherein the light shielding portion includes: a light shielding region that is provided in the semiconductor layer on the side close to a light receiving surface of the photoelectric conversion element for shielding light incident on the photoelectric conversion element from a specific direction; and an element isolation region that is provided to project in a depth direction of the semiconductor layer from the light shielding region toward a portion between the multiple photoelectric conversion elements in order to electrically and optically isolate the multiple photoelectric conversion elements from one another.
地址 Minato-ku JP