发明名称 |
SEMICONDUCTOR DEVICE WITH COMBINED PASSIVE DEVICE ON CHIP BACK SIDE |
摘要 |
Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. The semiconductor chip further includes a semiconductor device formed on the first side of the substrate and an electrically insulating layer formed on at least a portion of the second side of the substrate. The semiconductor chip further includes a capacitor device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the capacitor device is electrically insulated from the semiconductor device. |
申请公布号 |
US2015034995(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201313955587 |
申请日期 |
2013.07.31 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Munding Andreas;Gruber Martin |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor chip comprising:
a substrate including a first side and a second side, wherein the second side is opposite the first side; a semiconductor device formed on the first side of the substrate; an electrically insulating layer formed on at least a portion of the second side of the substrate; and a passive device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the passive device is electrically insulated from the semiconductor device. |
地址 |
Villach AT |