发明名称 SEMICONDUCTOR DEVICE WITH COMBINED PASSIVE DEVICE ON CHIP BACK SIDE
摘要 Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. The semiconductor chip further includes a semiconductor device formed on the first side of the substrate and an electrically insulating layer formed on at least a portion of the second side of the substrate. The semiconductor chip further includes a capacitor device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the capacitor device is electrically insulated from the semiconductor device.
申请公布号 US2015034995(A1) 申请公布日期 2015.02.05
申请号 US201313955587 申请日期 2013.07.31
申请人 Infineon Technologies Austria AG 发明人 Munding Andreas;Gruber Martin
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A semiconductor chip comprising: a substrate including a first side and a second side, wherein the second side is opposite the first side; a semiconductor device formed on the first side of the substrate; an electrically insulating layer formed on at least a portion of the second side of the substrate; and a passive device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the passive device is electrically insulated from the semiconductor device.
地址 Villach AT