METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device is provided as a semiconductor device manufacturing method that permits an opening to be formed in a good shape in a resist film. This manufacturing method is a semiconductor device manufacturing method having: a step of forming an insulating film 22 of any one of silicon nitride, silicon oxide, and silicon oxynitride, on a nitride semiconductor layer 20 or on a silicon carbide layer; a step of performing a treatment of oxidation or nitridation for a surface of the insulating film 22; a step of forming an EB resist film 46 on the insulating film 22, after completion of the treatment of oxidation or nitridation; and a step of irradiating the EB resist film 46 with an electron beam to effect exposure.

主权项

1. A method of manufacturing a semiconductor device comprising:
a step of forming an insulating film of any one of silicon nitride, silicon oxide, and silicon oxynitride, on a semiconductor layer; a step of introducing oxygen or nitrogen to the insulating film; a step of forming a resist film on the insulating film, after the step of introducing the oxygen or nitrogen; and a step of exposing the resist film with an electron beam.