发明名称 |
ELASTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film. |
申请公布号 |
US2015033521(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201414488447 |
申请日期 |
2014.09.17 |
申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
WATANABE Munehisa;IWAMOTO Hideki;KANDO Hajime;KIDO Syunsuke |
分类号 |
H03H3/10 |
主分类号 |
H03H3/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing an elastic wave device comprising:
a step of preparing a supporting substrate; a step of forming a high-acoustic-velocity film, in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric, on the supporting substrate; a step of forming a low-acoustic-velocity film, in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in a piezoelectric, on the high-acoustic-velocity film; a step of forming a piezoelectric layer on the low-acoustic-velocity film; and a step of forming an IDT electrode on a surface of the piezoelectric layer. |
地址 |
Nagaokakyo-shi JP |