发明名称 |
MEMRISTOR AND METHODS FOR MAKING THE SAME |
摘要 |
An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric. The open area exposes a surface of the switchable material. A top electrode is positioned in contact with the exposed surface of the switchable material at the open area. |
申请公布号 |
WO2015016851(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
WO2013US52813 |
申请日期 |
2013.07.31 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
SHENG, XIA;LI, XUEMA;LAM, SITY |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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