发明名称 MEMRISTOR AND METHODS FOR MAKING THE SAME
摘要 An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric. The open area exposes a surface of the switchable material. A top electrode is positioned in contact with the exposed surface of the switchable material at the open area.
申请公布号 WO2015016851(A1) 申请公布日期 2015.02.05
申请号 WO2013US52813 申请日期 2013.07.31
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 SHENG, XIA;LI, XUEMA;LAM, SITY
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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